20 1 412b 1 / 9 n ??? n - channel igbt igbt j t0 20 n120wc d /abcd /20n120c order codes ? marking ? package halogen free ? packaging device weight j t 0 20 n 12 0wc d j t0 20 n 12 0 wc d to - 247 no tube 6 g(typ) JT020N120ABCD jt020n120a bcd to - 3pb no tube 6 g(typ) 20n120c 20n120 to - 247 no tube 6 g(typ) ? package ? main characteristics i c 20 a v ces 12 00 v vcesat @vge=15 v 1. 8 v (type) ? ? ? ? ups ? applications ? general purpose inverters ? induction heating(ih) ? ups ? ? ? ? fs ? ??? , vce(sat), typ = 1. 8 v @ ic = 20 a and tc = 25c ? rohs ? features ? l ow gate charge ? fs technology ? satura tion voltage: vce(sat), typ = 1 . 8 v @ ic = 20 a and tc = 25c ? rohs product ? order message g r
jt020 n120wcd / abcd/ 20n120c 20 141 2b 2 / 9 ?? absolute ratings (tc=25 ) * ?? * collector current limited by maximum junction temperature ? parameter symbol ? value unit jt0 20 n120wcd / abcd/ 20n120c ? ? ces 12 00 v c t=25 t=100 ? 1 collector current C c m 60 a ? ? g e s 2 0 v turn - off safe area - 60 a ? d t c =25 150 w ??? j b stg b - 55 ?? l 300 r
jt020 n120wcd / abcd/ 20n120c 20 141 2b 3 / 9 e lectrical c haracteristics ? paramet er symbol tests conditions min typ max units ? off C characteristics ? collector - emmiter voltage bv ces i b c b = 50 0 a, v b gs b =0v 12 00 - - v ?? breakdown voltage temperature coefficient bv ce s / t j i b c b = 1m a, referenced to 25 - 0. 6 - v/ ?? ? zero gate voltage collector current i ces v b ce b = 12 00v,v b g e b =0v, t b c b =25 - - 0.2 m a t b c b =1 00 2 ma t b c b =1 50 - - 2.5 m a ?? gate - body leakage current, forward i g e sf v b ce b =0v, v b g e b = 2 0v - - 100 na ?? gate - bod y leakage current, reverse i g e sr v ce =0v, v g e = - 2 0v - - - 100 na ?? on - characteristics ?? gate threshold voltage v g e (th) v ce = v b g e , i c = 60 0 a 4 . 5 - 6.5 v ? collector - emmiter saturation voltage v cesat vge=15v ic= 20 a tc=25 tc=125 tc=150 - - - 1.8 2 . 0 2. 1 2. 4 5 - - v ? 2 short collector current note 2 i c sc vge=15v vce=600v tsc 10 s tc=25 160 a ? dynamic characteristics input capacitance c iss v ce =25v, v g e =0v, f=1.0mh b z b - 1 6 00 2400 pf output capacitance c oss - 1 2 0 1 90 pf reverse transfer capacitance c rss - 84 1 30 pf r
jt020 n120wcd / abcd/ 20n120c 20 141 2b 4 / 9 e lectrical c haracteristics switching characteristics ?? turn - on delay time t d (on) v ce = 6 00v,i c = 20 a,r g = 56 ? t c =25 inductive load - 85 ns ? turn - on rise time t r - 180 ns ?? turn - off delay time t d (off) - 360 ns ?? turn - off fall time t f - 100 ns turn - on energy e on 1 . 8 mj turn - off energy e off 1.1 mj total switching energy e total 2.9 mj ? total gate charge q g v ce = 60 0v , i c = 20 a v g e =1 5 v note 3 4 - 1 2 0 nc ??? anti - parallel diode characteristics and maximum ratings ? drain - source diode forward voltage v f v gs =0v, i s = 20 a - - 2. 9 v ?? diode reverse recovery time t rr v g e =0v, vr=800v i s = 20 a di f /dt= 750 a/ s (note 4) - 150 - ns ? reverse recovery charge q rr - 1. 2 - c ? parameter symbol max unit ??? thermal resistance, junction to case r th(j - c) 0. 35 /w ? thermal resistance, junction to ambient r th(j - a) 40 /w ? ? 1 ? 2 ??? 1 ? ?? 1000 3 ? 300 s, ?? 2 4 ??? notes: 1 pulse width limited by m aximum junction temperature 2 allowed number of short circuits: <1000; time between short circuits: >1s. 3 pulse test pulse width 300s,duty cycle2 4 essentially independent of operating temperature r
jt020 n120wcd / abcd/ 20n120c 20 141 2b 5 / 9 electrical characteristics (curves) typical output characteristics (tj= 25 ) turn - on characteristics vs. gate resistance capacitance characteristics typical saturation voltage characteristics typical output characteristics(tj=150 ) saturation voltage vs. case temp erature at variant current level 10 a 20 a 4 0a 25c 150c 20a r
jt020 n120wcd / abcd/ 20n120c 20 141 2b 6 / 9 switching loss vs. gate resistance turn - off characteristics vs. gate resistance turn - off characteristics vs. gate resistance turn - on characteristics vs. collector current turn - off characteristics vs. collector current switching loss vs. collector current gate charge characteristics 20a 20a r
jt020 n120wcd / abcd/ 20n120c 20 141 2b 7 / 9 soa characteristics turn - off soa transien t thermal impedance forward characteristics reverse recovery current 25c 150c 1 2 5 r
jt020 n120wcd / abcd/ 20n120c 20 141 2b 8 / 9 ? package mecha nical data to - 247 stored charge reverse recovery time u nit mm r
jt020 n120wcd / abcd/ 20n120c 20 141 2b 9 / 9 ? 1. ????????? ?????? ??? ? 2. ????? ?? 3. ????? ?????? 4. ??? note 1. jilin sino - microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86 - 432 - 64678411 86 - 432 - 64665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86 - 432 - 64675588 64675688 64678411 - 3098/3099 : 86 - 432 - 64671533 contact jilin sino - microelectronics co., ltd. add: no.99 shenzhe n street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 64678411 fax 86 - 432 - 64665812 web site www.hwdz.com.cn market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 64675588 64675688 64678411 - 3098/3099 fax: 86 - 432 - 64671533 r
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